X-Ray Residual Stress Measurement of Silicon Single Crystal

X-ray Stress Measurement of Nickel-base Single Crystal Superalloy Using Two-dimensional Detector

The stress in a single crystal of nickel-base superalloy with 72 % volume fraction of '-phase was measured by the X-ray method. The specimen whose surface normal was parallel to [001] direction was oscillated around -axis during recording of the X-ray diffraction pattern with a two-dimensional position sensitive proportional counter (PSPC). The stress was determined from the measured strain u...

Single Crystal Orientation Measurement by X-ray Methods

Semiconductor substrates made from single crystal materials need to be cut precisely along a fixed axis during the manufacturing process of the semiconductor components. Thus, measuring the crystal orientation is critical. For these measurements, Xray techniques demonstrate the highest precision. This report presents an outline of two popular X-ray diffraction techniques, the diffractometer and...

Residual Stress of TiNi Shape Memory Alloy Thin Films with (111) Single-crystal Silicon Wafer

As micro-actuator materials, TiNi shape memory alloy thin films with substrate are used more and more in MEMS field. The residual stress in Ti-rich TiNi thin films with silicon substrate prepared by the magnetron-sputtering technique is measured by both X-ray glancing and contour method. The influence of crystallization annealing temperature and film thickness on the residual stress is tested. ...

Single Crystal Diamond X-ray Lens Development

The next generation light sources such as diffractionlimited storage rings and high repetition rate free electron lasers (FELs) will generate x-ray beams with significantly increased peak and average brilliance. These future facilities will require x-ray optical components capable of handling large instantaneous and average power densities while tailoring the properties of the x-ray beams for a...

Live X-Ray Topography and Crystal Growth of Silicon